- 您现在的位置：买卖IC网 > Sheet目录238 > NUP4114UCLW1T2G (ON Semiconductor)TVS ARRAY QUAD UNIDIR SC88
NUP4114 Series, SZNUP4114HMR6T1G
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
I
Symbol
I PP
V C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
I F
I R V F
V RWM
I R
V BR
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
V C V BR V RWM
I T
V
I T
I F
Test Current
Forward Current
V F
P pk
C
Forward Voltage @ I F
Peak Power Dissipation
Capacitance @ V R = 0 and f = 1.0 MHz
I PP
Uni ? Directional TVS
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
V RWM
V BR
I R
V C
V C
(Note 1)
I T = 1 mA, (Note 2)
V RWM = 5.5 V
I PP = 5 A (Note 3)
I PP = 8 A (Note 3)
5.5
5.5
1.0
9.0
10
V
V
m A
V
V
Clamping Voltage
ESD Clamping Voltage
Maximum Peak Pulse Current
Junction Capacitance
Junction Capacitance
V C
V C
I PP
C J
C J
I PP = 1 A (Note 4)
Per IEC61000 ? 4 ? 2 (Note 5)
8x20 m s Waveform (Note 3)
V R = 0 V, f = 1 MHz between I/O Pins and GND
V R = 0 V, f = 1 MHz between I/O Pins
8.3
See Figures 1 & 2
10
12
0.6
0.3
V
A
pF
pF
1. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
2. V BR is measured at pulse test current I T .
3. Nonrepetitive current pulse (Pin 5 to Pin 2)
4. Nonrepetitive current pulse (I/O to GND).
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
6. Include SZ ? prefix devices where applicable.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000 ? 4 ? 2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000 ? 4 ? 2
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NUP4201DR2G
IC TVS LO CAP HS DATA 500W 8SOIC
NUP4201MR6T1
IC TVS DIODE ARRAY HS LINE 6TSOP
NUP4202W1T2G
IC TVS ARRAY HS DATALINE SOT-363
NUP4212UPMUTAG
TVS QUAD ARRAY LOW CAP 6-UDFN
NUP4302MR6T1
IC DIODE ARRAY SCHOTTKY TSOP6
NUP4304MR6T1
IC DIODE ARRAY LO CAP ESD SC74-6
NUP45V6P5T5G
TVS QUAD ARRAY LOW CAP SOT-953
NUP46V8P5T5G
TVS QUAD ARRAY LOW CAP SOT-953
相关代理商/技术参数
NUP4114UCW1
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Transient Voltage Suppressors
NUP4114UCW1_10
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Transient Voltage Suppressors
NUP4114UCW1T2G
功能描述:TVS二极管阵列 TVS ARRAY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
NUP4114UPXV6
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Transient Voltage Suppressors
NUP4114UPXV6T1G
功能描述:TVS二极管阵列 LOW CAP TVS ARRAY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
NUP412VP5
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Quad Array for ESD Protection
NUP412VP5T5G
功能描述:TVS二极管阵列 LOW CAP ZR QD ARRY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
NUP4201
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low cap. diode array for 2 Line High Speed USB protection devic
