NUP4114 Series, SZNUP4114HMR6T1G
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
I
Symbol
I PP
V C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
I F
I R V F
V RWM
I R
V BR
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
V C V BR V RWM
I T
V
I T
I F
Test Current
Forward Current
V F
P pk
C
Forward Voltage @ I F
Peak Power Dissipation
Capacitance @ V R = 0 and f = 1.0 MHz
I PP
Uni ? Directional TVS
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
V RWM
V BR
I R
V C
V C
(Note 1)
I T = 1 mA, (Note 2)
V RWM = 5.5 V
I PP = 5 A (Note 3)
I PP = 8 A (Note 3)
5.5
5.5
1.0
9.0
10
V
V
m A
V
V
Clamping Voltage
ESD Clamping Voltage
Maximum Peak Pulse Current
Junction Capacitance
Junction Capacitance
V C
V C
I PP
C J
C J
I PP = 1 A (Note 4)
Per IEC61000 ? 4 ? 2 (Note 5)
8x20 m s Waveform (Note 3)
V R = 0 V, f = 1 MHz between I/O Pins and GND
V R = 0 V, f = 1 MHz between I/O Pins
8.3
See Figures 1 & 2
10
12
0.6
0.3
V
A
pF
pF
1. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
2. V BR is measured at pulse test current I T .
3. Nonrepetitive current pulse (Pin 5 to Pin 2)
4. Nonrepetitive current pulse (I/O to GND).
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
6. Include SZ ? prefix devices where applicable.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000 ? 4 ? 2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000 ? 4 ? 2
http://onsemi.com
2
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